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MG50Q2YS40

Toshiba ยท IGBT Module

Toshiba MG50Q2YS40

Toshiba MG50Q2YS40 overview

Toshiba America Electronic Components MG50Q2YS40 IGBT, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:6 V, Collector Current-Max (IC):50 A, ...

Manufactured byToshiba
Part number or familyMG50Q2YS40
Product groupIGBT Module

Product details

Manufactured byToshiba
Product groupIGBT Module
DescriptionToshiba America Electronic Components MG50Q2YS40 IGBT, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:6 V, Collector Current-Max (IC):50 A, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:7, Number of Elements:2

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Manufactured by Toshiba View Toshiba profile
Product group IGBT Module Explore IGBT Module
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Total 1 item.
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1 Certified Pre-Owned: $150.00