Toshiba MG100Q2YS42 overview
Toshiba MG100Q2YS42 IGBT Module, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:6 V, Collector Current-Max (IC):100 A, Polarity/Channel Type...
Product details
Manufactured byToshiba
Product groupIGBT Module
DescriptionToshiba MG100Q2YS42 IGBT Module, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:6 V, Collector Current-Max (IC):100 A, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:7, Number of Elements:2
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Toshiba
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IGBT Module
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MG100Q2YS42
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