Samsung K4H560838H-UCCC overview
Samsung Semiconductor K4H560838H-UCCC Dram, Memory Density:268.4355 Mbit, Memory Width:8, Organization:32MX8, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:2.5 V, Access Time-Max:650 ps, Clock Frequency-Max (fCLK):200 MHz, Refresh Cycles:8192 SAMSUNG K4H560838H-UCCC Specialized Hot IC, K4H560838H-...
What is Samsung K4H560838H-UCCC?
Samsung Semiconductor K4H560838H-UCCC Dram, Memory Density:268.4355 Mbit, Memory Width:8, Organization:32MX8, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:2.5 V, Access Time-Max:650 ps, Clock Frequency-Max (fCLK):200 MHz, Refresh Cycles:8192 SAMSUNG K4H560838H-UCCC Specialized Hot IC, K4H560838H-...
Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4H560838H-UCCC Dram, Memory Density:268.4355 Mbit, Memory Width:8, Organization:32MX8, Supply Voltage-Nom (Vsup):2.5 V, Power Supplies:2.5 V, Access Time-Max:650 ps, Clock Frequency-Max (fCLK):200 MHz, Refresh Cycles:8192
Description 1786358774SAMSUNG K4H560838H-UCCC Specialized Hot IC, K4H560838H-UCCC SAMSUNG
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