NXP Semiconductor 934050550135 overview
NXP Semiconductors 934050550135 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Num...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP Semiconductors 934050550135 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:55 V, Number of Elements:1, Drain Current-Max (ID):3.5 A, Drain-source On Resistance-Max:80 mΩ
DescriptionNXP Semiconductors 934050550135 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:55 V, Number of Elements:1, Drain Current-Max (ID):3.5 A, Drain-source On Resistance-Max:80 mΩ
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