NXP Semiconductor 933467630112 overview
NXP Semiconductors 933467630112 Small Signal Bipolar Transistor, Collector-Emitter Voltage-Max:80 V, Collector Current-Max (IC):1 A, Polarity/Channel Type:NPN, ...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP Semiconductors 933467630112 Small Signal Bipolar Transistor, Collector-Emitter Voltage-Max:80 V, Collector Current-Max (IC):1 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):1000, Transition Frequency-Nom (fT):200 MHz
DescriptionNXP Semiconductors 933467630112 Small Signal Bipolar Transistor, Collector-Emitter Voltage-Max:80 V, Collector Current-Max (IC):1 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):1000, Transition Frequency-Nom (fT):200 MHz
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