Vishay SIHFBE30S-E3 overview
SIHFBE30S-E3 is made by Vishay. Vishay Siliconix SIHFBE30S-E3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:800 V,Number of Elements:1,Drain Current-Max (Abs) (ID):4.1 A,Drain Current-Max…
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Manufactured byVishay
DescriptionVishay Siliconix SIHFBE30S-E3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:800 V,Number of Elements:1,Drain Current-Max (Abs) (ID):4.1 A,Drain Current-Max (ID):4.1 A,Drain-source On Resistance-Max:3 ?
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