Product details
Manufactured byVishay
Product groupModules
DescriptionVishay Siliconix SI3456DV-T1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:6,DS Breakdown Voltage-Min:30 V,Number of Elements:1,Drain Current-Max (ID):5.1 A,Drain-source On Resistance-Max:45 m?
DescriptionVISHAY/SILICONIX SI3456DV-T1 N-Channel MOSFET 30V 5.1A Rds=10~4.5V -55~150 °C TSOP6
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