Product details
Manufactured byVishay
Product groupModules
DescriptionVishay Intertechnologies SQM60030E-GE3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:80 V, Number of Elements:1, Drain Current-Max (ID):120 A, Drain-source On Resistance-Max:3.2 mΩ
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Vishay
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Modules
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