Product details
Manufactured byVishay
Product groupModules
DescriptionVishay Intertechnologies SIHW30N60E-GE3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:600 V,Number of Elements:1,Drain Current-Max (Abs) (ID):29 A,Drain Current-Max (ID):29 A,Drain-source On Resistance-Max:125 m?
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Vishay
View Vishay profile
Product group
Modules
Explore Modules
Available from
Sourcing support available
Start a sourcing request