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SI7615BDNT-T1-GE3

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Vishay SI7615BDNT-T1-GE3

Vishay SI7615BDNT-T1-GE3 overview

Vishay Intertechnologies SI7615BDNT-T1-GE3 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN D...

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Part number or familySI7615BDNT-T1-GE3
Product groupModules

Product details

Manufactured byVishay
Product groupModules
DescriptionVishay Intertechnologies SI7615BDNT-T1-GE3 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:5,DS Breakdown Voltage-Min:20 V,Number of Elements:1,Drain Current-Max (ID):30 A,Drain-source On Resistance-Max:5.4 m?

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