TE Connectivity DU2880V overview
TE Connectivity Ltd DU2880V Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number o...
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DescriptionTE Connectivity Ltd DU2880V Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:8, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:VERY HIGH FREQUENCY BAND, Number of Elements:2, Power Gain-Min (Gp):13 dB, Drain Current-Max (ID):8 A
DescriptionTE Connectivity Ltd DU2880V Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:8, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:VERY HIGH FREQUENCY BAND, Number of Elements:2, Power Gain-Min (Gp):13 dB, Drain Current-Max (ID):8 A
DescriptionTYCO ELECTRONICS DU2880V TRANSISTOR, MOSFET, RF, 80W, 28V, 2-175_MHZ
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