TE Connectivity DU28200M overview
TE Connectivity Ltd DU28200M Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number ...
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DescriptionTE Connectivity Ltd DU28200M Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:4, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:VERY HIGH FREQUENCY BAND, Number of Elements:2, Power Gain-Min (Gp):13 dB, Drain Current-Max (ID):20 A
DescriptionTE Connectivity Ltd DU28200M Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:4, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:VERY HIGH FREQUENCY BAND, Number of Elements:2, Power Gain-Min (Gp):13 dB, Drain Current-Max (ID):20 A
DescriptionTYCO ELECTRONICS DU28200M TRANSISTOR, MOSFET, 200W, 28V, 2-175MHZ
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