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2N4150R1

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TT ELECTRONICS 2N4150R1

TT ELECTRONICS 2N4150R1 overview

TT Electronics Power and Hybrid / Semelab Limited 2N4150R1 Power Bipolar Transistor, Collector-Emitter Voltage-Max:80 V, Collector Current-Max (IC):5 A, Polarit...

Manufactured byTT ELECTRONICS
Part number or family2N4150R1
Product groupModules

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Manufactured byTT ELECTRONICS
Product groupModules
DescriptionTT Electronics Power and Hybrid / Semelab Limited 2N4150R1 Power Bipolar Transistor, Collector-Emitter Voltage-Max:80 V, Collector Current-Max (IC):5 A, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):40, Transition Frequency-Nom (fT):15 MHz
DescriptionTT Electronics Resistors 2N4150R1 Transistor, Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-39, 3 PIN

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