TT ELECTRONICS 2N6798SM overview
2N6798SM is made by TT ELECTRONICS. TT Electronics Resistors 2N6798SM Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE,Number of Terminals:3,DS Breakdown Voltage-Min:200 V,Number of Elements:1,Drain Current-Max (ID):5.5 A,Drain-source On Resistance-Max:400 m?
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Manufactured byTT ELECTRONICS
DescriptionTT Electronics Resistors 2N6798SM Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE,Number of Terminals:3,DS Breakdown Voltage-Min:200 V,Number of Elements:1,Drain Current-Max (ID):5.5 A,Drain-source On Resistance-Max:400 m?
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