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THMY12E11C75

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Toshiba THMY12E11C75

Toshiba THMY12E11C75 overview

Toshiba America Electronic Components THMY12E11C75 Dram, Memory Density:268.4355 Mbit, Memory Width:16, Organization:16MX16, Supply Voltage-Nom (Vsup):3.3 V, Po...

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Part number or familyTHMY12E11C75
Product groupModules

Product details

Manufactured byToshiba
Product groupModules
DescriptionToshiba America Electronic Components THMY12E11C75 Dram, Memory Density:268.4355 Mbit, Memory Width:16, Organization:16MX16, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:5.4 ns, Clock Frequency-Max (fCLK):133 MHz, Refresh Cycles:8192, Access Mode:FOUR BANK PAGE BURST

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