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THMY12E11B75

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Toshiba THMY12E11B75

Toshiba THMY12E11B75 overview

Toshiba America Electronic Components THMY12E11B75 Dram, Memory Density:1.208 Gbit, Memory Width:72, Organization:16MX72, Supply Voltage-Nom (Vsup):3.3 V, Power...

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Part number or familyTHMY12E11B75
Product groupModules

Product details

Manufactured byToshiba
Product groupModules
DescriptionToshiba America Electronic Components THMY12E11B75 Dram, Memory Density:1.208 Gbit, Memory Width:72, Organization:16MX72, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:5.4 ns, Clock Frequency-Max (fCLK):133 MHz, Refresh Cycles:8192, Access Mode:SINGLE BANK PAGE BURST

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