Texas Instruments TPIC5302DR overview
Texas Instruments TPIC5302DR Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 3 ELEMENTS WITH BUILT-IN...
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Manufactured byTexas Instruments
DescriptionTexas Instruments TPIC5302DR Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:16, DS Breakdown Voltage-Min:60 V, Number of Elements:3, Drain Current-Max (ID):1.4 A, Drain-source On Resistance-Max:350 mΩ
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