Texas Instruments CSD58887Q3 overview
CSD58887Q3 is made by Texas Instruments. Texas Instruments CSD58887Q3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:5, DS Breakdown Voltage-Min:25 V, Number of Elements:1, Drain Current-Max (Abs) (ID):60 A, Drain…
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Part number or familyCSD58887Q3
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Manufactured byTexas Instruments
DescriptionTexas Instruments CSD58887Q3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:5, DS Breakdown Voltage-Min:25 V, Number of Elements:1, Drain Current-Max (Abs) (ID):60 A, Drain Current-Max (ID):21 A, Drain-source On Resistance-Max:7.8 mΩ
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