Texas Instruments SMJ416100-10HKB overview
Texas Instruments SMJ416100-10HKB Dram, Memory Density:16.7772 Mbit, Memory Width:1, Organization:16MX1, Supply Voltage-Nom (Vsup):5 V, Access Time-Max:100 ns, ...
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Manufactured byTexas Instruments
Product groupDRAM's
DescriptionTexas Instruments SMJ416100-10HKB Dram, Memory Density:16.7772 Mbit, Memory Width:1, Organization:16MX1, Supply Voltage-Nom (Vsup):5 V, Access Time-Max:100 ns, Refresh Cycles:4096, Access Mode:FAST PAGE
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