Texas Instruments TM2CN64EFN-10 overview
Texas Instruments TM2CN64EFN-10 Dram, Memory Density:134.2177 Mbit, Memory Width:64, Organization:2MX64, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, ...
Product details
Manufactured byTexas Instruments
Product groupModules
DescriptionTexas Instruments TM2CN64EFN-10 Dram, Memory Density:134.2177 Mbit, Memory Width:64, Organization:2MX64, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:7.5 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:4096, Access Mode:DUAL BANK PAGE BURST
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Texas Instruments
View Texas Instruments profile
Product group
Modules
Explore Modules
Available from
Sourcing support available
Start a sourcing request