Texas Instruments TM2CN64EFH-10 overview
Texas Instruments TM2CN64EFH-10 Dram, Memory Density:134.2177 Mbit, Memory Width:64, Organization:2MX64, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, ...
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Manufactured byTexas Instruments
Product groupModules
DescriptionTexas Instruments TM2CN64EFH-10 Dram, Memory Density:134.2177 Mbit, Memory Width:64, Organization:2MX64, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:7.5 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:4096, Access Mode:DUAL BANK PAGE BURST
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