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UF28100V

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TE Connectivity UF28100V

TE Connectivity UF28100V overview

TE Connectivity Ltd UF28100V Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number ...

Manufactured byTE Connectivity
Part number or familyUF28100V
Product groupModules

Product details

Manufactured byTE Connectivity
Product groupModules
DescriptionTE Connectivity Ltd UF28100V Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:8, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:2, Power Gain-Min (Gp):10 dB, Drain Current-Max (ID):12 A
DescriptionTE Connectivity Ltd UF28100V Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:8, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:2, Power Gain-Min (Gp):10 dB, Drain Current-Max (ID):12 A

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