MRF173CQ overview
TE Connectivity Ltd MRF173CQ Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:4, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:VERY HIGH FREQUENCY BAND, Number of Elements:1, Drain Current-Max (ID):9 A
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DescriptionTE Connectivity Ltd MRF173CQ Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:4, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:VERY HIGH FREQUENCY BAND, Number of Elements:1, Drain Current-Max (ID):9 A
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