TE Connectivity JAN1N5719 overview
TE Connectivity Ltd JAN1N5719 Pin Diode, Diode Capacitance-Max:0.3 pF, Power Dissipation-Max:250 mW, Diode Forward Resistance-Max:1.25 Ω, Diode Element Materia...
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Manufactured byTE Connectivity
Product groupModules
DescriptionTE Connectivity Ltd JAN1N5719 Pin Diode, Diode Capacitance-Max:0.3 pF, Power Dissipation-Max:250 mW, Diode Forward Resistance-Max:1.25 Ω, Diode Element Material:SILICON, Breakdown Voltage-Min:150 V, Diode Type:PIN DIODE, Configuration:SINGLE, Surface Mount:NO, Number of Elements:1, Technology:POSITIVE-INTRINSIC-NEGATIVE
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