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HERAF803GHC0G

HERAF803GHC0G

HERAF803GHC0G overview

Taiwan Semiconductor HERAF803GHC0G Rectifier Diode, Output Current-Max:8 A, Forward Voltage-Max (VF):1 V, Reverse Recovery Time-Max:50 ns, Reverse Current-Max:10 µA, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:NO, Rep Pk Reverse Voltage-Max:200 V, Number of Elements:1

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DescriptionTaiwan Semiconductor HERAF803GHC0G Rectifier Diode, Output Current-Max:8 A, Forward Voltage-Max (VF):1 V, Reverse Recovery Time-Max:50 ns, Reverse Current-Max:10 µA, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:NO, Rep Pk Reverse Voltage-Max:200 V, Number of Elements:1

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