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HERAF1006G

Modules

HERAF1006G

HERAF1006G overview

Taiwan Semiconductor HERAF1006G Rectifier Diode, Output Current-Max:10 A, Reverse Recovery Time-Max:80 ns, Diode Element Material:SILICON, Diode Type:RECTIFIER ...

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DescriptionTaiwan Semiconductor HERAF1006G Rectifier Diode, Output Current-Max:10 A, Reverse Recovery Time-Max:80 ns, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:NO, Rep Pk Reverse Voltage-Max:600 V, Number of Elements:1

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