TSM7900DCQRF overview
Taiwan Semiconductor TSM7900DCQRF Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON DRAIN, 2 ELEMENTS WITH...
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DescriptionTaiwan Semiconductor TSM7900DCQRF Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:5, DS Breakdown Voltage-Min:20 V, Number of Elements:2, Drain Current-Max (ID):6 A, Drain-source On Resistance-Max:35 mΩ
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