TSM2302CXRF overview
Taiwan Semiconductor TSM2302CXRF Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:20 V, Number of Elements:1, Drain Current-Max (ID):2.8 A, Drain-source On Resistance-Max:65 mΩ
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DescriptionTaiwan Semiconductor TSM2302CXRF Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:20 V, Number of Elements:1, Drain Current-Max (ID):2.8 A, Drain-source On Resistance-Max:65 mΩ
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