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HDBS103G

Taiwan Semiconductor ยท Bridge Rectifier Diodes

Taiwan Semiconductor HDBS103G

Taiwan Semiconductor HDBS103G overview

Taiwan Semiconductor HDBS103G Bridge Rectifier Diode, Output Current-Max:1 A, Forward Voltage-Max (VF):1 V, Reverse Recovery Time-Max:50 ns, Diode Element Mater...

Manufactured byTaiwan Semiconductor
Part number or familyHDBS103G

Product details

Manufactured byTaiwan Semiconductor
Product groupBridge Rectifier Diodes
DescriptionTaiwan Semiconductor HDBS103G Bridge Rectifier Diode, Output Current-Max:1 A, Forward Voltage-Max (VF):1 V, Reverse Recovery Time-Max:50 ns, Diode Element Material:SILICON, Breakdown Voltage-Min:200 V, Diode Type:BRIDGE RECTIFIER DIODE, Configuration:BRIDGE, 4 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:200 V, Number of Elements:4

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Manufactured by Taiwan Semiconductor View Taiwan Semiconductor profile
Product group Bridge Rectifier Diodes Explore Bridge Rectifier Diodes
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