Taiwan Semiconductor DBL209GC1G overview
DBL209GC1G is a bridge rectifier diode made by Taiwan Semiconductor. Taiwan Semiconductor DBL209GC1G Bridge Rectifier Diode, Output Current-Max:2 A, Forward Voltage-Max (VF):1.3 V, Diode Element Material:SILICON, Breakdown Voltage-Min:1.4 kV, Diode Type:BRIDGE RECTIFIER DIODE, Configuration:BRIDGE, 4 ELEMENTS…
Manufactured byTaiwan Semiconductor
Part number or familyDBL209GC1G
Product typeBridge Rectifier Diode
Product details
Manufactured byTaiwan Semiconductor
Product typeBridge Rectifier Diode
DescriptionTaiwan Semiconductor DBL209GC1G Bridge Rectifier Diode, Output Current-Max:2 A, Forward Voltage-Max (VF):1.3 V, Diode Element Material:SILICON, Breakdown Voltage-Min:1.4 kV, Diode Type:BRIDGE RECTIFIER DIODE, Configuration:BRIDGE, 4 ELEMENTS, Surface Mount:NO, Rep Pk Reverse Voltage-Max:1.4 kV, Number of Elements:4
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Manufactured by
Taiwan Semiconductor
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Product type
Bridge Rectifier Diode
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