STMICROECTRONICS STD30NE06LT4 overview
STD30NE06LT4 STMicroelectronics STD30NE06LT4 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN...
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DescriptionSTD30NE06LT4
DescriptionSTMicroelectronics STD30NE06LT4 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (Abs) (ID):30 A,Drain Current-Max (ID):30 A,Drain-source On Resistance-Max:30 m?
DescriptionMOSFET N-CH 60V 30A DPAK
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