STMICROECTRONICS STB7N52K3 overview
STMicroelectronics STB7N52K3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number...
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DescriptionSTMicroelectronics STB7N52K3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:525 V, Number of Elements:1, Drain Current-Max (Abs) (ID):6.2 A, Drain Current-Max (ID):6.3 A, Drain-source On Resistance-Max:980 mΩ
DescriptionMOSFET N-CH 525V 6.2A D2PAK
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