STMICROECTRONICS STB70N10F4 overview
STMicroelectronics STB70N10F4 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number o...
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DescriptionSTMicroelectronics STB70N10F4 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (Abs) (ID):65 A,Drain Current-Max (ID):65 A,Drain-source On Resistance-Max:19.5 m?
DescriptionMOSFET N-CH 100V 65A D2PAK
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