STMICROECTRONICS BUZ10 overview
STMicroelectronics BUZ10 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of T...
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DescriptionSTMicroelectronics BUZ10 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:50 V, Number of Elements:1, Drain Current-Max (Abs) (ID):20 A, Drain Current-Max (ID):23 A, Drain-source On Resistance-Max:70 mΩ
DescriptionMOSFET N-CH 50V 23A TO-220
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