STMICROECTRONICS STD1NB80-1 overview
STMicroelectronics STD1NB80-1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number...
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DescriptionSTMicroelectronics STD1NB80-1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:800 V, Number of Elements:1, Drain Current-Max (Abs) (ID):1 A, Drain Current-Max (ID):1 A, Drain-source On Resistance-Max:20 Ω
DescriptionMOSFET; Transistor Polarity:N Channel; Power Dissipation:50W; Continuous Drain Current, Id:1uA; On-R
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