STMICROECTRONICS STAP85035 overview
STMicroelectronics STAP85035 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, ...
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Product groupModules
DescriptionSTMicroelectronics STAP85035 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, DS Breakdown Voltage-Min:40 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):8 A, Drain Current-Max (ID):8 A
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