STMICROECTRONICS STS2DNF30L overview
STMicroelectronics STS2DNF30L Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN ...
Product details
Manufactured bySTMICROECTRONICS
Product groupModules
DescriptionSTMicroelectronics STS2DNF30L Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE,Number of Terminals:8,DS Breakdown Voltage-Min:30 V,Number of Elements:2,Drain Current-Max (Abs) (ID):3 A,Drain Current-Max (ID):3 A,Drain-source On Resistance-Max:150 m?
DescriptionSTMicroelectronics STS2DNF30L Discrete Semiconductor Products
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
STMICROECTRONICS
View STMICROECTRONICS profile
Available from
Sourcing support available
Start a sourcing request
