STMICROECTRONICS STP11NM80 overview
STMicroelectronics STP11NM80 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of ...
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DescriptionSTMicroelectronics STP11NM80 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:800 V,Number of Elements:1,Drain Current-Max (Abs) (ID):11 A,Drain Current-Max (ID):11 A,Drain-source On Resistance-Max:400 m?
DescriptionSTMicroelectronics STP11NM80 Discrete Semiconductor Products
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