STMICROECTRONICS STGW35NB60SD overview
STMicroelectronics STGW35NB60SD IGBT, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:5 V, Collector Current-Max (IC):70 A, Polarity/Channel T...
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DescriptionSTMicroelectronics STGW35NB60SD IGBT, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:5 V, Collector Current-Max (IC):70 A, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1
DescriptionSTMicroelectronics STGW35NB60SD Discrete Semiconductor Products
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