STMICROECTRONICS STS1C1S250 overview
STMicroelectronics STS1C1S250 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL,Surface Mount:YES,Configuration:SEPARATE, 2 ELEMENTS ...
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Product groupModules
DescriptionSTMicroelectronics STS1C1S250 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL,Surface Mount:YES,Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE,Number of Terminals:8,DS Breakdown Voltage-Min:250 V,Number of Elements:2,Drain Current-Max (Abs) (ID):600 mA,Drain Current-Max (ID):750 mA,Drain-source On Resistance-Max:1.4 ?
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