STMICROECTRONICS STRH10N25ESY3 overview
STMicroelectronics STRH10N25ESY3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number...
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Product groupModules
DescriptionSTMicroelectronics STRH10N25ESY3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:250 V,Number of Elements:1,Drain Current-Max (Abs) (ID):10 A,Drain Current-Max (ID):10 A,Drain-source On Resistance-Max:1.1 ?
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