STMICROECTRONICS STRH100N10FSY1 overview
STMicroelectronics STRH100N10FSY1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Nu...
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Product groupModules
DescriptionSTMicroelectronics STRH100N10FSY1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):72 A, Drain Current-Max (ID):48 A, Drain-source On Resistance-Max:35 mΩ
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