STMICROECTRONICS STQ1HNK60R overview
STMicroelectronics STQ1HNK60R Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of...
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Product groupModules
DescriptionSTMicroelectronics STQ1HNK60R Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:600 V,Number of Elements:1,Drain Current-Max (Abs) (ID):400 mA,Drain Current-Max (ID):400 mA,Drain-source On Resistance-Max:8.5 ?
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