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STP9NM60N

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STMICROECTRONICS STP9NM60N

STMICROECTRONICS STP9NM60N overview

STMicroelectronics STP9NM60N Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number ...

Manufactured bySTMICROECTRONICS
Part number or familySTP9NM60N
Product groupModules

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Manufactured bySTMICROECTRONICS
Product groupModules
DescriptionSTMicroelectronics STP9NM60N Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (Abs) (ID):9 A, Drain Current-Max (ID):6.5 A, Drain-source On Resistance-Max:745 mΩ

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