STMICROECTRONICS STP18N60M2 overview
STMicroelectronics STP18N60M2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of...
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Product groupModules
DescriptionSTMicroelectronics STP18N60M2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:600 V,Number of Elements:1,Drain Current-Max (ID):13 A,Drain-source On Resistance-Max:280 m?
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