STMICROECTRONICS STP120N4F6 overview
STMicroelectronics STP120N4F6 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number...
Product details
Manufactured bySTMICROECTRONICS
Product groupModules
DescriptionSTMicroelectronics STP120N4F6 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:40 V, Number of Elements:1, Drain Current-Max (Abs) (ID):80 A, Drain Current-Max (ID):80 A, Drain-source On Resistance-Max:4.3 mΩ
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
STMICROECTRONICS
View STMICROECTRONICS profile
Product group
Modules
Explore Modules
Available from
Sourcing support available
Start a sourcing request