STMICROECTRONICS STI33N65M2 overview
STMicroelectronics STI33N65M2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number...
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Product groupModules
DescriptionSTMicroelectronics STI33N65M2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:650 V, Number of Elements:1, Drain Current-Max (Abs) (ID):24 A, Drain Current-Max (ID):24 A, Drain-source On Resistance-Max:140 mΩ
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