STMICROECTRONICS STI28N60M2 overview
STMicroelectronics STI28N60M2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number...
Product details
Manufactured bySTMICROECTRONICS
Product groupModules
DescriptionSTMicroelectronics STI28N60M2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (Abs) (ID):22 A, Drain Current-Max (ID):22 A, Drain-source On Resistance-Max:150 mΩ
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
STMICROECTRONICS
View STMICROECTRONICS profile
Product group
Modules
Explore Modules
Available from
Sourcing support available
Start a sourcing request