STMICROECTRONICS STH3N150-2 overview
STMicroelectronics STH3N150-2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Numbe...
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Product groupModules
DescriptionSTMicroelectronics STH3N150-2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:1.5 kV, Number of Elements:1, Drain Current-Max (Abs) (ID):2.5 A, Drain Current-Max (ID):2.5 A, Drain-source On Resistance-Max:9 Ω
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