STMICROECTRONICS STH12N120K5-2 overview
STMicroelectronics STH12N120K5-2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Nu...
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Product groupModules
DescriptionSTMicroelectronics STH12N120K5-2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:1.2 kV, Number of Elements:1, Drain Current-Max (Abs) (ID):12 A, Drain Current-Max (ID):12 A, Drain-source On Resistance-Max:690 mΩ
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